SKU:27120673217
InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 23 - Jul 28
Description
InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished2" InSb wafer (N type, Te doped) Size: 2" dia x 0. 45 0. 5mm thick with thickness tolerance + 25 um Orientation <111>B + 0. 5o Polishing: one side side(Sb) polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation <111>B + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (5. 0E17 2. 0E18) cm 3 @77K Mobility 24,000 34,000 cm2 Vs EPD <1. 0
Mobility: 1630-1870 cm^2/V
Minor Flat: EJ(0-1-1)+-1 degree
NRTL or CSA certification (UL61010 or SPE1000) is available at the extra cost
Working Temperature 300°C max for < 30 minutes
coating speed
Bow:<= 10 um
} Material: Polypropylene
Operation Instructions Video
001 mm and accuracy of +/-0
Crystal Cost Higher
The ITV1000 has both threaded ports and a modular face to mount to all SMC FRLs (filters-regulators-lubricators)
Inlet connections 1/4" NPT-HIP-10RV
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